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| JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -130 -80 -7 -20 -30 3 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors 2SB1156 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-8A ;IB=-0.4A IC=-20A ;IB=-2A IC=-8A ;IB=-0.4A IC=-20A ;IB=-2A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-10A ; VCE=-2V IC=-0.5A ; VCE=-10V 45 60 30 25 MHz 260 MIN -80 -0.5 -1.5 -1.5 -2.5 -10 -50 |I |I TYP. MAX UNIT V V V V V A A SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE -1 hFE -2 hFE -3 fT Switching times ton tstg tf Turn-on time Storage time Fall time VCC=-50V; IC=-3A;IB1=-0.8A ,IB2=0.8A 0.5 1.2 0.2 |I |I |I s s s hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1156 Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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